2729GN-500V
GENERAL DESCRIPTION
The 2729GN-500V is an internally matched, COMMON SOURCE, class
AB, GaN on SiC HEMT transistor capable of providing over 11.2 dB
gain, 500 Watts of pulsed RF output power at 100μs pulse width, 10%
duty factor across the 2700 to 2900 MHz band. The transistor has
internal pre-match for optimal performance. This hermetically sealed
transistor is designed for S-Band Radar applications. It utilizes gold
metallization and eutectic attach to provide highest reliability and
superior ruggedness.
Market Application – 2729GN-500V is designed for S-Band Pulsed
Radar
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C 1120 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG) -55 to +125 C
Operating Junction Temperature +250 C
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