2729GN-270V-datasheet
GENERAL DESCRIPTION
The 2729GN-270V is an internally matched, COMMON SOURCE, class
AB, GaN on SiC HEMT transistor capable of providing over 15.3 dB
gain, 270 Watts of pulsed RF output power at 200 S pulse width, 10%
duty factor across the 2700 to 2900 MHz band. This hermetically sealed
transistor is utilizes gold metallization and eutectic attach to provide
highest reliability and superior ruggedness.
Market Application – High Power S-Band Pulsed AESA Radar
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C 517 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS)
125 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG) -55 to +125 C
Operating Junction Temperature +250 C
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