2729GN-150V
GENERAL DESCRIPTION
The 2729GN-150V is an internally matched, COMMON SOURCE, class AB, GaN
on SiC HEMT transistor capable of providing over 15.7dB gain, 150 Watts of
pulsed RF output power across the 2700MHz to 2900MHz band under 100µs
pulse width and 10% duty cycle pulsing. This hermetically sealed transistor
utilizes gold metallization and eutectic attach to provide highest reliability and
superior ruggedness.
Market Application – High Power S-Band Pulsed Radar
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C 287 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS)
125 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG) -55 to +125 C
Operating Junction Temperature +250 C
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