2729GN – 150
GENERAL DESCRIPTION
The 2729GN-150 is an internally matched, COMMON SOURCE, class AB
GaN on SiC transistor capable of providing 13dB gain, 150 Watts of pulsed RF
output power at 100µs pulse width, 10% duty factor across the 2700 to 2900
MHz band. The transistor has internal pre-match for optimal performance. This
hermetically sealed transistor is specifically designed for S-band radar
applications. It utilizes gold metallization and eutectic attach to provide highest
reliability and superior ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C 330 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG) -55 to +125 °C
Operating Junction Temperature +200 °C
| 文件下载 | 2729GN-150 Rev 1 |
