2729GN-270r1-1
GENERAL DESCRIPTION
The 2729GN-270 is an internally matched, COMMON SOURCE, class
AB GaN on SiC HEMT power transistor capable of providing 14dB gain,
280 Watts of pulsed RF output power at 100µs pulse width, 10% duty
factor across the 2700 to 2900 MHz band. The transistor has internal
pre-match for optimal performance. This hermetically sealed transistor is
specifically designed for S-band radar applications. It utilizes gold
metallization and eutectic attach to provide highest reliability and
superior ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C 570 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG) -55 to +125°C
Operating Junction Temperature +200 °C
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