2729GN-150r1
GENERAL DESCRIPTION
The 2729GN-150 is an internally matched, COMMON SOURCE, class
AB GaN on SiC transistor capable of providing 13dB gain, 150 Watts of
pulsed RF output power at 100µs pulse width, 10% duty factor across
the 2700 to 2900 MHz band. The transistor has internal pre-match for
optimal performance. This hermetically sealed transistor is specifically
designed for S-band radar applications. It utilizes gold metallization and
eutectic attach to provide highest reliability and superior ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C 330 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG) -55 to +125°C
Operating Junction Temperature +200 °C
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