2729GN-400r1
GENERAL DESCRIPTION
The 2729GN-400 is an internally matched, COMMON SOURCE, class AB
GaN on SiC HEMT transistor capable of providing over 11dB gain, 400 Watts
of pulsed RF output power at 100μs pulse width, 10% duty factor across the
2700 to 2900 MHz band. The transistor has internal pre-match for optimal
performance. This hermetically sealed transistor is specifically designed for S
band radar applications. It utilizes gold metallization and eutectic attach to
provide highest reliability and superior ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C 850 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG) -55 to +125 C
Operating Junction Temperature +250 C
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